| 2020 | Huang-Kai Wang, Sakthivel Kogularasu, Po-Hsun Liao, Yu-Tsun Yao, Ming-Lun Lee, Jinn-Kong Sheu*, “NiOx Nanoparticles as Active Water Splitting Catalysts for the Improved Photostability of a n-GaN Photoanode”, Solar Energy Materials and Solar Cells, Vol.216, pp 110723 |
| 2020 | Ming-Lun Lee, Ching-Hua Chen and Jinn-Kong Sheu*,”Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask”, Physica E: Low-dimensional Systems and Nanostructures, 124, 114367 |
| 2020 | Jinn-Kong Sheu*, Po-Hsun Liao, Yen-Cheng Lee, Huang-Kai Wang, and Ming-Lun Lee*,” Photoelectrochemical Generation of Hydrogen and Formic Acid Using GaN Films Decorated With TiO2/Ag Nanoparticles Composite Structure as Photoelectrodes” The Journal of Physical Chemistry C, 124, 17, 9591-9598 |
| 2020 | Ming-Lun Lee, Po-Hsun Liao, Hsin-Yan Cheng, Wei-Yu Yen, and Jinn-Kong Sheu*, “UV light-emitting diodes grown on GaN templates with selective-area Si implantation”, Optics Express, 28, No.4, 4674-4685 |
| 2019 | Ming-Lun Lee, Po-Hsun Liao, Guan-Lun Li, Hung-Wei Chang, Chi-Wing Lee & Jinn-Kong Sheu*, “Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater”, Solar Energy Materials and Solar Cells, Vol.202, pp 110153–90 |
| 2019 | Ming-Lun Lee, Shih-Sian Wang, Yu-Hsiang Yeh, Po-Hsun Liao, and Jinn-Kong Sheu*,” Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth”, Scientific Reports, 9, 3243 |
| 2019 | Fu-Bang Chen, Kai-Lun Chi, Wei-Yu Yen, Jinn-Kong Sheu*, Ming-Lun Lee, Jin-Wei Shi,” Investigation on Modulation Speed of Photon-recycling White Light-emitting Diodes with Vertical-conduction Structure”, JOURNAL OF LIGHTWAVE TECHNOLOGY, Vol. 37, No. 4, 1225-1230 |
| 2018 | Ming-Lun Lee, Feng-Wen Huang, Po-Cheng Chen, and Jinn-Kong Sheu, ” GaN intermediate band solar cells with Mn-doped absorption layer”, Scientific Reports, Vol. 8, Article number: 8641 (2018) (IF: 4.609 )
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| 2018 | 95. Ya-Hsuan Shih, Jih-Yuan Chang, Yen-Kuang Kuo, Fang-Ming Chen, Man-Fang Huang, Ming-Lun Lee, and Jinn-Kong Sheu*,”Design of GaN-Based Multi-Color Tunnel-Junction Light-Emitting Diodes” , IEEE Transactions on Electron Devices , Vol. 65, No. 1, pp.165-171, Jan. (2018)
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| 2017 | 94. Jinn-Kong Sheu*, Po-Hsun Liao, Hsin-Yan Cheng, and Ming-Lun Lee,”Photoelectrochemical hydrogen generation from water using undoped GaN with selective-area Si-implanted stripes as photoelectrodes”, J. Mater. Chem. A, 2017, 5, 22625-22630 (2017)
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| 2017 | 93. M.L. Lee, Y.H. Yeh, Z.Y. Liu, K.J. Chiang, J.K. Sheu,” Planar GaN-Based Blue Light-Emitting Diodes With Surface pn Junction Formed by Selective-Area Si-Ion Implantation”, IEEE Transactions on Electron Device, Vol.64, No.10, 4156 - 4160 (2017)
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| 2017 | 92. Yen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, Wei-Chih Lai, Heng Liu, Fang-Ming Chen, Ming-Lun Lee, Jinn-Kong Sheu*, ” Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions”, Optics Express, Vol.25, No.16, A777-784 (2017)
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| 2017 | 91. J. K. Sheu, P. H. Liao, T.C. Huang, K.J. Chiang, W. C. Lai and M. L. Lee,”InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO 2 reduction to formic acid” , Solar Energy Materials and Solar Cells, Vol.166, pp 86–90 (2017)
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| 2017 | 90.Yen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, Fang-Ming Chen, Ming-Lun Lee, and Jinn-Kong Sheu*,” Theoretical Investigation of Efficient Green Tunnel-Junction Light-Emitting Diodes” IEEE Electron Device Letters Vol.38(1), pp.75-78(2017)
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| 2016 | 89. Jinn-Kong Sheu, Po-Cheng Chen, Cheng-Lun Shin, Ming-Lun Lee, Po-Hsun Liao, and Wei-Chih Lai, ”Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption” Solar Energy Materials and Solar Cells, Volume 157, December 2016, Pages 727–732 (2016) (IF: 4.784 )
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| 2016 | 88. Jinn-Kong Sheu, Po-Cheng Chen, Yu-Hsiang Yeh, Shih-Hsun Kuo, Ming-Lun Lee, Po-Hsun Liao and Wei-Chih Lai “Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer” ACTA Materialia, Vol.108, pp.17-25 (2016) (IF: 5.301 )
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| 2016 | 87. Ya-Hsuan Shih, Jih-Yuan Chang, Jinn-Kong Sheu*, Yen-Kuang Kuo, Fang-Ming Chen, Ming-Lun Lee, and Wei-Chih Lai“ Design of Hole Blocking and Electron Blocking Layers in AlxGa1-xN-based UV Light-Emitting Diodes” IEEE Transactions on Electron Devices , Vol. 63, No. 3, pp.1141-1147 (2016) (IF: 2.605 )
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| 2016 | 86. Fu-Bang Chen, Jinn-Kong Sheu*,Wei-Yu Yen, Yen-Chin Wang, Shih-Hsien Huang, Yu-Hsiang Yeh, Chih-Chiang Chang and Ming-Lun Lee” GaN-based UV light-emitting diodes with a green indicator through selective-area photon recycling” IEEE Transactions on Electron Devices, Vol. 63, No. 3, pp.1122-1127 (2016) (IF: 2.605 )
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| 2015 | 85. Yu-Hsiang Yeh, Jinn-Kong Sheu*, Ming-Lun Lee, Wei-Yu Yen, Li-Chi Peng, Chun-Yi Yeh, Po-Hsun Liao, Po-Cheng Chen, and Wei-Chih Lai,” Vertical GaN-based LEDs with naturally textured surface formed by patterned sapphire substrate with self-assembled Ag nanodots as etching mask”, IEEE Transactions on Electron Devices, VOL. 62, NO. 9, Sept. pp.2919-2923 (2015) (IF: 2.605 )
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| 2015 | 84. Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P. C. Chen, Wei-Chih Lai, and Jinn-Kong Sheu” White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids” OPTICS EXPRESS, Vol. 23, No. 7 A401-A412(2015) (IF: 3.307 ) |
| 2015 | 83. Jinn-Kong Sheu*, Fu-Bang Chen, Wei-Yu Yen, Yen-Chin Wang, Chun-Nan Liu, Yu-Hsiang Yeh, and Ming-Lun Lee “GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure”, OPTICS EXPRESS, Vol. 23, No. 7 A371-A381(2015) (2015/04) (IF: 3.307 ) |
| 2015 | 82. Jinn-Kong Sheu, Fu-Bang Chen, Yen-Chin Wang, Chih-Chiang Chang, Shih-Hsien Huang, Chun-Nan Liu, and Ming-Lun Lee,” Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single redphosphor”, OPTICS EXPRESS, Vol. 23, No. 7 A232-A239(2015) (IF: 3.307 )
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| 2014 | 81. Jinn-Kong Sheu, Ming-Lun Lee and Yu-Cheng Lin,” Surface plasmon-enhanced GaN metal–insulator–semiconductor ultraviolet detectors with Ag nanoislands embedded in a silicon dioxide gate layer” IEEE Journal of Selected Topics in Quantum Electronics, Vol.20, No.6, pp. 3801005 (2014) (IF: 3.971 )
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| 2014 | 80. Ming-Lun Lee*, Yu-Hsiang Yeh, Kuo-Hua Chang, Po Cheng Chen, Wei-Chih Lai, and Jinn-Kong Sheu,” Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures”, IEEE Journal of Selected Topics in Quantum Electronics, Vol.20, No.6, pp. 3802705 (2014) (IF: 3.971 )
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| 2014 | 79. Jinn-Kong Sheu, Fu-Bang Chen, Shou-Hung Wu, Ming-Lun Lee, Po-Cheng Chen, and Yu-Hsiang Yeh,“ Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns”, Optics Express, Vol. 22, Issue S5, pp. A1222-A1228 (2014) (IF: 3.307 ) |
| 2013 | 78. Yu-Hsiang Yeh, Jinn-Kong Sheu*, Ming-Lun Lee, Po-Cheng Chen, Yu-Chen Yang, Cheng-Hsiung Yen and Wei-Chih Lai,” InGaN flip-chip light-emitting diodes with embedded air voids as light-scattering layer”, IEEE Electron Device Letters, Vol. 34 Issue: 12, pp.1542-1544 (2013)(IF: 3.048 ) |
| 2013 | 77. Shu-Yen Liu, J. K. Sheu*, Yu-Chuan Lin, Yu-Tong Chen, S. J. Tu, M. L. Lee, and W. C. Lai,” InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting”, Optics Express, Vol. 21, Issue S6, pp. A991-A996 (2013) (IF: 3.307 ) |
| 2013 | 76. Jinn-Kong Sheu, Feng-Wen Huang, Chia-Hui Lee, Ming-Lun Lee, Yu-Hsiang Yeh, Po-Cheng Chen and Wei-Chih Lai” Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer” Applied Physics Letters, Vol. 103, Issue 6, 063906 (2013/08/05) (IF: 3.411 ) |
| 2013 | 75. Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P.C.Chen, Ming-Jui Wu, Wei-Chih Lai, and Jinn-Kong Sheu,“ Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates”, Optics Express, Vol. 21, Issue S5, pp. A864-A871 (2013) (IF: 3.307 ) |
| 2013 | 74. Kai-Lun Chi, Shu-Ting Yeh, Yu-Hsiang Yeh, Kun-Yan Lin, Jin-Wei Shi, Yuh-Renn Wu, Ming Lun Lee, and Jinn-Kong Sheu” GaN-Based Dual-Color LEDs With p -Type Insertion Layer for Controlling the Ratio of Two-Color Intensities” IEEE Transactions on Electron Devices, Vol.60, No.9, pp.2821~ 2826 (2013) (IF: 2.605 ) |
| 2013 | 73. Jinn-Kong Sheu, Yu-Hsiang Yeh, Shang-Ju Tu, Ming-Lun Lee, P.C.Chen and Wei-Chih Lai,” Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate”, Journal of Lightwave Technology”, Vol.31, No.8, pp.1318-1322(2013) (IF: 3.671 ) |
| 2013 | 72. Jinn-Kong Sheu, Feng-Wen Huang, Yu-Hsuan Liu, P.C.Chen, Yu-Hsiang Yeh, Ming-Lun Lee and Wei-Chih Lai,” Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy” Applied Physics Letters, Vol. 102, No. 7, 071107-1~071107-3 (2013) (IF: 3.411 ) |
| 2012 | 71. Jinn-Kong Sheu*, Shang-Ju Tu, Yu-Hsiang Yeh, Ming-Lun Lee, and Wei-Chih Lai, “Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate” Applied Physics Letters, Vol. 101, No. 15, pp. 151103-1~151103-4 (2012) (IF: 3.411 ) |
| 2012 | 70. Chi, Kai-Lun ; Shi, Jin-Wei ; Jang, C. H. ; Kivisaari, Pyry; Oksanen, Jani; Tulkki, Jukka ; Lee, M. L.; Sheu, J. K.,” Carrier Dynamics in High-Efficiency Blue GaN Light-Emitting Diodes Under Different Bias Currents and Temperatures”, IEEE Photonics Journal, Vol.4, No. 5, pp. 1870-1880 (2012) |
| 2012 | 69. Shu-Yen Liu, J. K. Sheu,* Yu-Chuan Lin, S. J. Tu, F. W. Huang, M. L. Lee, and W. C. Lai,” Mn-doped GaN as photoelectrodes for the photoelectrolysis of water under visible light”, Optics Express, Vol. 20, Issue S5, pp.A678-A683 (2012) |
| 2012 | 68. Ming-Lun Lee*, Yu-Hsiang Yeh, and Shang-Ju Tu, ” Solar-Blind p-i-n Photodetectors Formed on SiO2-Patterned n-GaN Templates”, IEEE JOURNAL OF QUANTUM ELECTRONICS, Vol. 48, No. 10, pp. 1305–1309 (2012) |
| 2012 | 67. Shang-Ju Tu, Ming-Lun Lee, Yu-Hsiang Yeh, Feng-Wen Huang, Po-Cheng Chen, Wei-Chih Lai,Chung-Wei Chen, Gou Chung Chi, and Jinn-Kong Sheu*, ” Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps”, IEEE JOURNAL OF QUANTUM ELECTRONICS, Vol. 48, Iss. 8, pp. 1004-1009 (2012)
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| 2012 | 66. Y.C. Yang, Jinn-Kong Sheu*, Ming-Lun Lee, Che-Kang Hsu, Shang-Ju Tu, Shu-Yen Liu, C.C. Yang, Feng-Wen Huang, ” Vertical InGaN light-emitting diodes with Ag paste as bonding layer”, MICROELECTRONICS RELIABILITY, Vol. 52, Iss. 5, pp. 949-951 (2012)
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| 2012 | 65. Feng-Wen Huang, Jinn-Kong Sheu*, Shang-Ju Tu, Po-Cheng Chen, Yu-Hsiang Yeh, Ming-Lun Lee, Wei-Chih Lai, Wen-Che Tsai, and Wen-Hao Chang,” Optical properties of Mn in regrown GaN-based epitaxial layers” Optical Materials Express, Vol. 2 Iss. 4 pp. 469-477 (2012)
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| 2012 | 63. Shu-Yen Liu, J. K. Sheu*, M. L. Lee, Yu-Chuan Lin, S. J. Tu,1 F. W. Huang, and W. C. Lai, ”Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation”, Optics Express Vol. 20, Iss. S2, pp. A190–A196 (2012) |
| 2012 | 62. Y.C. Yang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko, “Vertical InGaN light-emitting diodes with a sapphire-face-up structure”, Optics Express Vol. 20, Iss. 1, 119-124 (2012) |
| 2011 | 61. Liang-Jyi Yan, Cheng Huang Kuo, Jinn-Kong Sheu*, Ming-Lun Lee, Wei-Chun Tseng, “Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN“ Journal of Alloys and Compounds, Vol.516, pp.38-40 (2011) |
| 2011 | 60. Feng-Wen Huang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Wei-Chih Lai, Wen-Che Tsai , and Wen-Hao Chang,” Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection”, Optics Express Vol. 19, Iss. S6, A1211-1218 (2011) |
| 2011 | 59. Shu-Yen Liu, Yu-Chuan Lin, Jhao-Cheng Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai and J. K. Sheu*,” Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts” Optics Express Vol. 19, Iss. S6, A1196-1201 (2011) |
| 2011 | 57. J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi,” Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers” IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 10, pp.1400-1401 (2011) |
| 2011 | 56. C. H. Jang, J. K. Sheu*, S. J. Chang, M. L. Lee, C. C. Yang, S. J. Tu, F. W. Huang, and C. K. Hsu,” Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire” IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 14, JULY 15, pp.968-970,2011 (2011) |
| 2011 | 55. Chih-Ciao Yang, C. H. Jang, Jinn-Kong Sheu* ,Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Yu-Hsiang Yeh and Wei-Chih Lai, “Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration” Optics Express, Vol. 19, Issue S4, pp. A695-A700 (2011) |
| 2011 | 54. Ming-Lun Lee*, T. S. Mue, F.W. Huang, J. H. Yang, and J. K. Sheu,” High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer” Optics Express Vol. 19, Iss. 13, pp. 12658–12663 (2011) |
| 2011 | 53. Shang-Ju Tu, Jinn-Kong Sheu*, Ming-Lun Lee, Chih-Ciao Yang, Kuo-Hua Chang, Yu-Hsiang Yeh, Feng-Wen Huang, and Wei-Chih Lai,” Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells” Optics Express Vol. 19, Iss. 13, pp. 12719–12726 (2011) |
| 2011 | 52. Che-Kang Hsu; Jinn-Kong Sheu; Jia-Kuen Wang; Ming-Lun Lee; Kuo-Hua Chang; Shang-Ju Tu; Wei-Chih Lai” Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling” Electrochem. Solid-State Lett. 14, H343 (2011) |
| 2011 | 51. Shi, Jin-Wei, Kuo, F. -M., Huang, H. -W., Sheu, Jinn-Kong, Yang, Chih-Ciao, Lai, Wei-Chih, Lee, Ming-Lung,” The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer”, IEEE Electron Device Letter, Vol. 32 Issue: 5 Pages: 656-658(2011) |
| 2011 | 50. Shi, Jin-Wei; Huang, H-W ; Kuo, F-M ; Lai, W-C ; Lee, Ming-Lun, and Jinn-Kong Sheu,” Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique”, IEEE Transactions on Electron Devices, Vol.58, No.2, PP.495-500 (2011) |
| 2010 | L.J. Yan, J. K. Sheu, F. W. Huang and M. L. Lee，Polarized edge emission from GaN-based light-emitting diodes sandwiched by dielectric/metal hybrid reflectors，JJournal of Applied Physics， vol.108 ,no.11 ,pp113102-1~113102-5,2010 |
| 2010 | Shu-Yen Liu, J. K. Sheu, Jhao-Cheng Ye, S.J.Tu, Che-Kang Hsu, M. L. Lee, C. H. Kuo and W.C. Lai，Characterization of n-GaN with Naturally Textured Surface for Photoelectrochemical Hydrogen Generation，Journal of The Electrochemical Society， vol.157 ,no.12 ,H1106-H1109,2010 |
| 2010 | Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai，InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film，Optics Express， vol.18 ,no.s4 ,A562–A567,2010 |
| 2010 | Ming-Lun. Lee, T. S. Mue, J. K. Sheu, K.H. Chang, S. J. Tu, and T. H. Hsueh，Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer，Journal of The Electrochemical Society， vol.157 ,no.11 ,H1019-H1022,2010 |
| 2010 | C. C. Yang, J. K. Sheu, Xin-Wei. Liang, Min-Shun. Huang, M. L. Lee, K. H. Chang, S. J. Tu, Feng-Wen. Huang, and W. C. Lai，Enhancement of The Conversion Efficiency of GaN-Based Photovoltaic Devices with AlGaN/InGaN Absorption Layers，Applied Physics Letters， vol.97 ,no.2 ,021113-1~021113-3,2010 |
| 2010 | Shi, Jin-Wei, Huang, H. -W., Kuo, F. -M., Sheu, J. K., Lai, W. -C., Lee, M. L.，Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer，IEEE Photonics Technology Letters， vol.22 ,no.14 ,pp1033-1035,2010 |
| 2010 | Kuo-Hua Chang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Chih-Ciao Yang, Huan-Shao Kuo, J. H. Yang , Wei-Chih Lai，Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy，APPLIED PHYSICS LETTERS， vol.97 ,no.013502 ,013502-1~013502-3,2010 |
| 2010 | Chung-Hsun Jang, Jinn-Kong Sheu, C. M. Tsai, Shoou-jinn Chang, Wei-Chih Lai, Ming-Lun Lee, T. K. Ko, C. F. Shen, and S.C.Shei，Improved Performance of GaN-Based Blue LEDs with the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer，IEEE Journal of Quantum Electronics， vol.46 ,no.4 ,pp513-517,2010 |
| 2010 | S. H. Tu, C. J. Lan, S.H. Wang, M. L. Lee*, K.H.Chang, R. M. Lin, J. Y. Chang and J. K. Sheu，InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer，APPLIED PHYSICS LETTERS， vol.96 ,no.133504 ,133504-1~133504-3,2010 |
| 2010 | Liang-Jyi Yan, Chih-Chiao Yang, Ming-Lun Lee, Shang-Ju Tu ,Chih-Sung Chang and Jinn-Kong Sheu，AlGaInP/GaP Heterostructures Bonded with Si Substrate to Serve as Solar Cells and Light Emitting Diodes，Journal of the Electrochemical Society， vol.157 ,no.4 ,H452-H454,2010 |
| 2009 | Shu-Yen Liu, J. K. Sheu, Chun-Kai Tseng, Jhao-Cheng Ye, K.H. Chang, M. L. Lee and W.C. Lai，Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the Ohmic contacts from the electrolyte，Journal of the Electrochemical Society， vol.157 ,no.2 ,B266-B268,2009 |
| 2009 | C. M. Tsai, J. K. Sheu, W.C. Lai , M. L. Lee, S. J. Chang , C. S. Chang, T. K. Ko and C. F. Shen，GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth，IEEE Journal of Selected topics in Quantum Electronics， vol.15 ,no.4 ,pp1275-1280,2009 |
| 2009 | J. K. Sheu, K.H. Chang, M. L. Lee, J. F. Huang, K. S. Kang, W. L. Wang, W. C. Lai and T. H. Hsueh，Characterization of gallium-doped zinc oxide contact on n-type gallium nitride epitaxial layers，Journal of the Electrochemical Society， vol.156 ,no.8 ,H679-H683,209 |
| 2009 | Jin-Kong Sheu, Chih-Ciao Yang, Shang-Ju Tu, Kuo-Hua Chang, Ming-Lun Lee , Wei-Chih Lai, Li-Chi Peng，Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers，IEEE Electron Device Letter， vol.30 ,no.3 ,pp225-227,2009 |
| 2009 | M. L. Lee*, Ping-Feng Chi and J. K. Sheu，Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio，Applied Physics Letters， vol.94 ,no.1 ,pp013512-1~013512-3,2009 |
| 2008 | 33.J. K. Sheu, K. H. Chang and M. L. Lee,Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to GaN ,Applied Physics Letters ,vol.11 ,no.92 ,pp.113512-1~113512-3 ,2008 |
| 2008 | M. L. Lee, J. K. Sheu and Yung-Ru Shu,32. Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransistors with high optical gain and high rejection ratio ,Applied Physics Letters ,vol.5 ,no.92 ,pp.053506-1~.053506-3 ,2008 |
| 2008 | J. K. Sheu, K. H. Chang , M. L. Lee，Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to GaN，Applied Physics Letters， vol.92 ,no.11 ,pp113512-1~113512-3,2008 |
| 2008 | J. K. Sheu, M. L. Lee, Y. S. Lu, and K. W. Shu，Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency，IEEE Journal of Quantum Electronics， vol.12 ,no.44 ,pp.1211-1218,2008 |
| 2008 | J. K. Sheu, I. Hsiu Hung, W. C. Lai, S. C. Shei and M. L. Lee，Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads，Applied Physics Letters， vol.10 ,no.93 ,103507-1~103507-3,2008 |
| 2008 | M. L. Lee, J. K. Sheu, Yung-Ru Shu，Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransistors with high optical gain and high rejection ratio，Applied Physics Letters， vol.92 ,no.5 ,pp053506-1~.053506-3,2008 |
| 2007 | M. L. Lee, J. K. Sheu, and C. C Hu,Nonalloyed Cr-Au-based Ohmic contacts to n-GaN ,Applied Physics Letters ,vol.18 ,no.91 ,pp.182106-1~182106-3 ,2007 |
| 2007 | 29. J. K. Sheu, K. W. Shu, M. L. Lee, C. J. Tun and G. C. Chi,Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Sputtering ,Journal of The Electrochemical Society ,vol.154 ,no.6 ,pp.H521-H524 ,2007 |
| 2007 | 30. J. K. Sheu, Y. S. Lu, M. L. Lee, Wei-Chih Lai, C. H. Kuo and Chun-Ju Tun,Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer ,Applied Physics Letters ,vol.90 ,no.26 ,pp.263511-1~263511-3 ,2007 |
| 2007 | 28.M. L. Lee and J. K. Sheu,GaN-based Ultraviolet p-i-n Photodiodes with Buried p-layer Structure Grown by MOVPE ,Journal of the Electrochemical Society ,vol.154 ,no.3 ,pp.H182~H184 ,2007 |
| 2006 | 27. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun, and G. C. Chi,Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring ,Applied Physics Letters ,vol.89 ,no.18 ,pp.183509-1-183509-3 ,2006 |
| 2006 | 26. Ko TK, Chang SJ, Sheu JK, Shei SC, Chiou YZ, Lee ML, Shen CF, Chang SP, Lin KW,AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY ,vol.21 ,no.8 ,pp.1064-1068 ,2006 |
| 2006 | 24. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, and G. C. Chi,Planar ultra-violet photodetectors formed by Si implantation into p-GaN ,Journal of the Electrochemical Society ,vol.193 ,no.9 ,pp.799-801 ,2006 |
| 2006 | 25. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, and G. C. Chi, 2006,Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation ,Applied Physics Letters ,vol.88 ,pp.203508-1-203508-3 ,2006 |
| 2006 | 23. Shih-Chang Shei , Chi-Ming Tsai, Jinn-Kong Sheu,Wei-Chi Lai , Ming-Lun Lee, and Cheng-Huang Kuo,Emission Mechanism of Mixed-color InGaN/GaNMulti-quantum Well Light-emitting Diodes ,Jpn. J. Applied Physics ,vol.145 ,no.4A ,pp.2463-2466 ,2006 |
| 2006 | 22. J. K. Sheu, C. M. Tsai, M. L. Lee, S. C .Shei and W. C. Lai,InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface ,Applied Physics Letters ,vol.88 ,pp.113505-1-113505-3 ,2006 |
| 2006 | 21. C. J. Tun, J. K. Sheu, M. L. Lee, C. C. Hu, C. K. Hsieh and G. C. Chi ,Journal of the Electrochemical Society. ,vol.153 ,no.4 ,pp.296-298 ,2006 |
| 2006 | 18. Chun-Ju Tun , Jinn-Kong Sheu, Bao-Jen Pong, Min-Lum Lee, Ming-Yu Lee, Cheng-Kang Hsieh, Ching-Chung Hu, and Gou-Chung Chi,Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer ,IEEE. Photon. Technol. Lett. ,vol.18 ,no.1 ,pp.274-276 ,2006 |
| 2006 | 19.J. K. Sheu, M. L. Lee, C. J. Tun, S.W. Lin,Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN ,Appl. Phys. Lett. ,vol.88 ,pp.043506-1-043506-3 ,2006 |
| 2006 | 20.M. L. Lee, J. K. Sheu, and S. W. Lin,Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer ,Applied Physics Letters ,vol.88 ,pp.032103-1-032103-3 ,2006 |
| 2005 | 15.J. K. Sheu, S. S. Chen, M. L. Lee, W. C. Lai, W. H. Chang, and G. C. Chi,Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase ,Journal of the Electrochemical Society ,vol.152 ,no.11 ,pp.813-815 ,2005 |
| 2005 | 17. C. J. Kao, M. C. Chen, C.J. Tun, G. C. Chi, J. K. Sheu, W. C. Lai, M. L. Lee, F.Ren and S.J.Pearton,Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors ,Journal of Applied Physics ,vol.198 ,pp.064506-1-064506-3 ,2005 |
| 2005 | 14. J. K. Sheu, M. L. Lee, H. C. Tseng, W. C. Lai, and G. C. Chi,Rectifying characteristics of WSi0.8--GaN Schottky barrier diodes with a GaN cap layer grown at low temperature ,Journal of Applied Physics. ,vol.86 ,pp.036106- ,2005 |
| 2005 | 13. J. K. Sheu, M. L. Lee, and W. C. Lai, 2005,”Aluminum gallium nitride ultraviolet p-i-n photodiodes with buried p-layer structure,Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure ,Appl. Phys. Lett. ,vol.87 ,pp.043501-1-043501-3 ,2005 |
| 2005 | 16. T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C. Shei, J. K. Sheu, W. S. Chen, and C. F. Shen,AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers ,Journal of Crystal growth ,vol.283 ,pp.68-71 ,2005 |
| 2004 | 10. M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang,W. C. Lai, and G. C. Chi,Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer ,IEEE Electron Device Letters ,vol.25 ,pp.593-595 ,2004 |
| 2004 | 11. C. J. Kao, J. K. Sheu, W. C. Lai , M. L. Lee, M. C. Chen and G. C. Chi,Effect of low-temperature-grown GaN cap layer on electrical properties of Al0.25Ga0.75N/GaN heterojunction field-effect transistors ,Appl. Phys. Lett. ,vol.85 ,pp.1430-1432 ,2004 |
| 2004 | 12. J. K. Sheu, M. L. Lee, and W. C. Lai,Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes ,Appl. Phys. Lett. ,vol.86 ,pp.052103-1-052103-3 ,2004 |
| 2003 | J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su and J. M. Tsai,Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer ,Journal Electronic Materials ,vol.32 ,pp.400-402 ,2003 |
| 2003 | 9. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M. Tsai and G. C. Chi,Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer ,Journal Appl. Phys. ,vol.94 ,pp.1753-1757 ,2003 |
| 2003 | X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee,,Deep level defect in Si-implanted GaN n+-p junction ,Applied Physics Letters ,vol.82 ,pp.3671-3673 ,2003 |
| 2003 | S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai,GaN Metal–Semiconductor–Metal Photodetectors With Low-Temperature-GaN Cap Layers and ITO Metal Contacts ,IEEE Electron Device Letters ,vol.24 ,pp.212-214 ,2003 |
| 2003 | 8. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M. Tsai and G. C. Chi,GaN Schottky barrier photodetectors with a low-temperature GaN cap layer ,Applied Physics Letters ,vol.82 ,no.17 ,pp.2913-2915 ,2003 |
| 2003 | L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen , C. J. Kao, G. C. Chi, S. J. Chang and Y. K. Su,Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure ,solid-state Electronics ,no.47 ,pp.873-878 ,2003 |
| 2002 | J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, , M. J. Chen, G. C. Chi, S. J. Chang , Y. K. Su and C. T. Lee,Planar GaN n+-p photodetectors formed by Si implants into p-GaN ,Applied Physics Letters ,vol.81 ,no.22 ,pp.4263-4265 ,2002 |
| 2002 | J. K. Sheu, M. L. Lee , C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, and G. C. Chi,Characterization of Si implants in p-type GaN ,IEEE J. Selected topics in Quantum Electronics ,vol.18 ,no.4 ,pp.767-772 ,2002 |
| 2002 | M. L. Lee, J. K. Sheu, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J. Chang and G. C. Chi,GaN p-n junction diode formed by Si ion implantation into p-GaN ,solid-state electronics ,vol.46 ,no.12 ,pp.2179-2183 ,2002 |